Helios
Helios-r8
Coating Measurement of Solar Cells
Reflectance, Layer Thickness of Poly-Si Coating of TOPCon Solar Wafers
Functions of Helios-r8
- Single-point measurement √
- Reflectance at user-definable wavelength √
- Coating layer thickness √
- User-definable quality limits √
- Good / Bad indication √
- Integrated fixed reference √
- Average Reflectance within a selectable wavelength interval √
- Manual single axis table √
- Automation full wafer mapping √
Highlights of Helios-r8
- Offline and inline configurations
- Non-contact, non-destructive measurement
- Fast, static point-by-point or real-time inline measurement
- Poly-Si layer thickness (50–450 nm)
- Refractive index n&k (3.0–4.5)
- Reflectance spectra
- TOPCon solar cells (n-type, p-type, bifacial)
- Etched rear side (acidic/alkaline, bare etched)
- Integrated reference standards
- Insensitive to wafer rotation, tilt, distance, or surface roughness
- Very fast measurement (≤200ms per point)
- Easy operation with user-definable quality limits and good/bad indication
Helios
Inline measurement of SiN coating thickness and refractive index on solar wafers direct after the coating process